| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| High Speed | |
| Inverting | |
| 2 | |
| Dependent | |
| MOSFET | |
| 2 | |
| 31(Typ) | |
| 32(Typ) | |
| 36(Typ) | |
| CMOS|LSTTL | |
| 6.5 | |
| 18 | |
| 10.5(Typ) | |
| 1.58 | |
| 1.75 | |
| 1.5 | |
| 1000 | |
| -40 | |
| 125 | |
| Under Voltage Lockout | |
| No | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
The MC33151VDR2G power driver from ON Semiconductor can provide management of your transistors and switches. This device has a maximum propagation delay time of 100 ns and a maximum power dissipation of 560 mW. Its maximum power dissipation is 560 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 6.5 V and a maximum of 18 V.
| EDA / CAD Models |
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