IXYSIXXH50N60B3D1Puce IGBT
Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247AD
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| XPT | |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 1.55 | |
| 120 | |
| 0.1 | |
| 600 | |
| -55 | |
| 175 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.46(Max) |
| Largeur du paquet | 5.3(Max) |
| Longueur du paquet | 16.26(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247AD |
| 3 |
This fast-switching IXXH50N60B3D1 IGBT transistor from Ixys Corporation will be perfect in your circuit. Its maximum power dissipation is 600000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes xpt technology.
| EDA / CAD Models |
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