IXYSIXXH50N60B3D1IGBT 芯片

Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247AD

This fast-switching IXXH50N60B3D1 IGBT transistor from Ixys Corporation will be perfect in your circuit. Its maximum power dissipation is 600000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes xpt technology.

A datasheet is only available for this product at this time.

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