| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 1.6(Min) | |
| 2300@0V | |
| 23.7@5V | |
| 645@25V | |
| 100000 | |
| 41 | |
| 70 | |
| 35 | |
| 25 | |
| -55 | |
| 150 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.4(Max) |
| Largeur du paquet | 6.22(Max) |
| Longueur du paquet | 6.73(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
Looking for a component that can both amplify and switch between signals within your circuit? The IXTY1R6N50D2 power MOSFET from Ixys Corporation provides the solution. Its maximum power dissipation is 100000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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