| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±20 | |
| 90 | |
| 44@10V | |
| 205@10V | |
| 205 | |
| 12000@25V | |
| 890000 | |
| 28 | |
| 60 | |
| 89 | |
| 32 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.34(Max) mm |
| Largeur du paquet | 5.21(Max) mm |
| Longueur du paquet | 16.13(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Conditionnement du fournisseur | PLUS 247 |
| 3 |
If you need to either amplify or switch between signals in your design, then Ixys Corporation's IXTX90P20P power MOSFET is for you. Its maximum power dissipation is 890000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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