| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 300 | |
| ±20 | |
| 5 | |
| 52 | |
| 100 | |
| 25 | |
| 73@10V | |
| 110@10V | |
| 110 | |
| 3490@25V | |
| 400000 | |
| 20 | |
| 22 | |
| 60 | |
| 24 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Largeur du paquet | 4.9(Max) |
| Longueur du paquet | 15.8(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3P |
| 3 | |
| Forme de sonde | Through Hole |
This IXTQ52N30P power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 400000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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