| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 15 | |
| 480@10V | |
| 123@10V | |
| 123 | |
| 4080@25V | |
| 300000 | |
| 65 | |
| 73 | |
| 110 | |
| 38 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.15(Max) |
| Largeur du paquet | 4.83(Max) |
| Longueur du paquet | 10.66(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
Make an effective common gate amplifier using this IXTP15N50L2 power MOSFET from Ixys Corporation. Its maximum power dissipation is 300000 mW. This device utilizes linear l2 technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
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