| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ยฑ20 | |
| 15 | |
| 480@10V | |
| 123@10V | |
| 123 | |
| 4080@25V | |
| 300000 | |
| 65 | |
| 73 | |
| 110 | |
| 38 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 9.15(Max) |
| Package Width | 4.83(Max) |
| Package Length | 10.66(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
Make an effective common gate amplifier using this IXTP15N50L2 power MOSFET from Ixys Corporation. Its maximum power dissipation is 300000 mW. This device utilizes linear l2 technology. This MOSFET transistor has an operating temperature range of -55 ยฐC to 150 ยฐC. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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