| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 140 | |
| 11@10V | |
| 155@10V | |
| 155 | |
| 4700@25V | |
| 600000 | |
| 26 | |
| 50 | |
| 85 | |
| 35 | |
| -55 | |
| 175 | |
| Installation | Surface Mount |
| Hauteur du paquet | 5.1(Max) |
| Largeur du paquet | 14(Max) |
| Longueur du paquet | 16.05(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-268 |
| 3 |
Compared to traditional transistors, IXFT140N10P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 600000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with hiperfet technology.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.