| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 140 | |
| 11@10V | |
| 155@10V | |
| 155 | |
| 4700@25V | |
| 600000 | |
| 26 | |
| 50 | |
| 85 | |
| 35 | |
| -55 | |
| 175 | |
| Mounting | Surface Mount |
| Package Height | 5.1(Max) |
| Package Width | 14(Max) |
| Package Length | 16.05(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-268 |
| 3 |
Compared to traditional transistors, IXFT140N10P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 600000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with hiperfet technology.
| EDA / CAD Models |
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