| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 120 | |
| 16@10V | |
| 150@10V | |
| 150 | |
| 4900@25V | |
| 600000 | |
| 26 | |
| 42 | |
| 85 | |
| 33 | |
| -55 | |
| 175 | |
| Installation | Surface Mount |
| Hauteur du paquet | 5.1(Max) |
| Largeur du paquet | 14(Max) |
| Longueur du paquet | 16.05(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-268 |
| 3 |
This IXFT120N15P power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 600000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes hiperfet technology.
| EDA / CAD Models |
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