| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 120 | |
| 16@10V | |
| 150@10V | |
| 150 | |
| 4900@25V | |
| 600000 | |
| 26 | |
| 42 | |
| 85 | |
| 33 | |
| -55 | |
| 175 | |
| Mounting | Surface Mount |
| Package Height | 5.1(Max) |
| Package Width | 14(Max) |
| Package Length | 16.05(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-268 |
| 3 |
This IXFT120N15P power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 600000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes hiperfet technology.
| EDA / CAD Models |
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