| Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 16 | |
| 400@10V | |
| 36@10V | |
| 36 | |
| 2480@25V | |
| 300000 | |
| 22 | |
| 25 | |
| 70 | |
| 23 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.15(Max) |
| Largeur du paquet | 4.83(Max) |
| Longueur du paquet | 10.66(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXFP16N50P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 300000 mW. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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