| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 300 | |
| ±20 | |
| 110 | |
| 24@10V | |
| 185@10V | |
| 185 | |
| 14800@25V | |
| 700000 | |
| 20 | |
| 30 | |
| 100 | |
| 30 | |
| -55 | |
| 150 | |
| Installation | Screw |
| Hauteur du paquet | 9.6(Max) |
| Largeur du paquet | 25.42(Max) |
| Longueur du paquet | 38.23(Max) |
| Carte électronique changée | 4 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-227B |
| 4 | |
| Forme de sonde | Screw |
Thanks to Ixys Corporation, both your amplification and switching needs can be taken care of with one component: the IXFN140N30P power MOSFET. Its maximum power dissipation is 700000 mW. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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