| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 80 | |
| 77@10V | |
| 190@10V | |
| 190 | |
| 13100@25V | |
| 1300000 | |
| 8 | |
| 25 | |
| 87 | |
| 48 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 26.16(Max) |
| Largeur du paquet | 5.13(Max) |
| Longueur du paquet | 19.96(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-264AA |
| 3 |
If you need to either amplify or switch between signals in your design, then Ixys Corporation's IXFK80N60P3 power MOSFET is for you. Its maximum power dissipation is 1300000 mW. This device utilizes polar3 hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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