| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 80 | |
| 77@10V | |
| 190@10V | |
| 190 | |
| 13100@25V | |
| 1300000 | |
| 8 | |
| 25 | |
| 87 | |
| 48 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 26.16(Max) |
| Package Width | 5.13(Max) |
| Package Length | 19.96(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-264AA |
| 3 |
If you need to either amplify or switch between signals in your design, then Ixys Corporation's IXFK80N60P3 power MOSFET is for you. Its maximum power dissipation is 1300000 mW. This device utilizes polar3 hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Design AI-powered medical devices
Explore system design tips, part recs and AI insights to help you build faster, safer diagnostic and therapy solutions—all in Arrow’s latest white paper.