| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 50 | |
| ±20 | |
| 4 | |
| 5.3 | |
| 500 | |
| 250 | |
| 500@10V | |
| 6.1@10V | |
| 6.1 | |
| 240@25V | |
| 25000 | |
| 35 | |
| 47 | |
| 13 | |
| 6.1 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 6.1 mm |
| Largeur du paquet | 2.3 mm |
| Longueur du paquet | 6.6 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | IPAK |
| 3 |
Looking for a component that can both amplify and switch between signals within your circuit? The IRFU9010PBF power MOSFET from Vishay provides the solution. Its maximum power dissipation is 25000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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