25-50% de réduction
VishayIRFPE30PBFMOSFET
Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-247AC
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±20 | |
| 4.1 | |
| 3000@10V | |
| 78(Max)@10V | |
| 78(Max) | |
| 1300@25V | |
| 125000 | |
| 30 | |
| 33 | |
| 82 | |
| 12 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 20.82(Max) |
| Largeur du paquet | 5.31(Max) |
| Longueur du paquet | 15.87(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247AC |
| 3 | |
| Forme de sonde | Through Hole |
Compared to traditional transistors, IRFPE30PBF power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 125000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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