| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±20 | |
| 1.4 | |
| 11000@10V | |
| 38(Max)@10V | |
| 38(Max) | |
| 500@25V | |
| 54000 | |
| 31 | |
| 17 | |
| 58 | |
| 9.4 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.01(Max) mm |
| Largeur du paquet | 4.65(Max) mm |
| Longueur du paquet | 10.51(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Amplify electronic signals and switch between them with the help of Vishay's IRFBG20PBF power MOSFET. Its maximum power dissipation is 54000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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