| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1000 | |
| ±20 | |
| 1.4 | |
| 11000@10V | |
| 38(Max)@10V | |
| 38(Max) | |
| 500@25V | |
| 54000 | |
| 31 | |
| 17 | |
| 58 | |
| 9.4 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 9.01(Max) mm |
| Package Width | 4.65(Max) mm |
| Package Length | 10.51(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Amplify electronic signals and switch between them with the help of Vishay's IRFBG20PBF power MOSFET. Its maximum power dissipation is 54000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Dispositivos médicos alimentados por IA
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