| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| LCDMOS | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| -55 to 150 | |
| 6.2 | |
| 1200@10V | |
| 39(Max)@10V | |
| 39(Max) | |
| 1100@25V | |
| 125000 | |
| 17 | |
| 20 | |
| 27 | |
| 12 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.01(Max) |
| Largeur du paquet | 4.7(Max) |
| Longueur du paquet | 10.41(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IRFBC40LCPBF power MOSFET, developed by Vishay. Its maximum power dissipation is 125000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes HEXFET technology.
| EDA / CAD Models |
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