| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| LCDMOS | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| -55 to 150 | |
| 6.2 | |
| 1200@10V | |
| 39(Max)@10V | |
| 39(Max) | |
| 1100@25V | |
| 125000 | |
| 17 | |
| 20 | |
| 27 | |
| 12 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 9.01(Max) |
| Package Width | 4.7(Max) |
| Package Length | 10.41(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IRFBC40LCPBF power MOSFET, developed by Vishay. Its maximum power dissipation is 125000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes HEXFET technology.
| EDA / CAD Models |
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