Infineon Technologies AGIPW65R070C6FKSA1MOSFET
Trans MOSFET N-CH 650V 53.5A 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| CoolMOS | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 3.5 | |
| -55 to 150 | |
| 53.5 | |
| 70@10V | |
| 170@10V | |
| 170 | |
| 3900@100V | |
| 391000 | |
| 6 | |
| 17 | |
| 90 | |
| 17 | |
| -55 | |
| 150 | |
| Tube | |
| 63@10V | |
| 20 | |
| 0.9 | |
| Installation | Through Hole |
| Hauteur du paquet | 20.9 mm |
| Largeur du paquet | 5.03 mm |
| Longueur du paquet | 15.9 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
Compared to traditional transistors, IPW65R070C6FKSA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 391000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology.
| EDA / CAD Models |
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