Infineon Technologies AGIPP200N15N3GXKSA1MOSFET
Trans MOSFET N-CH 150V 50A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 4 | |
| 50 | |
| 20@10V | |
| 23@10V | |
| 23 | |
| 1820@75V | |
| 150000 | |
| 6 | |
| 11 | |
| 23 | |
| 14 | |
| -55 | |
| 175 | |
| Tube | |
| 16@8V|16@10V | |
| 200 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.45(Max) mm |
| Largeur du paquet | 4.57(Max) mm |
| Longueur du paquet | 10.36(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
Make an effective common source amplifier using this IPP200N15N3GXKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 150000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos 3 technology.
| EDA / CAD Models |
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