Infineon Technologies AGIPP040N06N3GXKSA1MOSFET
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 90 | |
| 4@10V | |
| 98@10V | |
| 98 | |
| 8000@30V | |
| 188000 | |
| 5 | |
| 70 | |
| 40 | |
| 30 | |
| -55 | |
| 175 | |
| Tube | |
| 3@10V|3.3@10V | |
| Installation | Through Hole |
| Hauteur du paquet | 9.45(Max) mm |
| Largeur du paquet | 4.57(Max) mm |
| Longueur du paquet | 10.36(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
Looking for a component that can both amplify and switch between signals within your circuit? The IPP040N06N3GXKSA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 188000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes optimos 3 technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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