Infineon Technologies AGIPP040N06N3GXKSA1MOSFETs
Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 90 | |
| 4@10V | |
| 98@10V | |
| 98 | |
| 8000@30V | |
| 188000 | |
| 5 | |
| 70 | |
| 40 | |
| 30 | |
| -55 | |
| 175 | |
| Tube | |
| 3@10V|3.3@10V | |
| Mounting | Through Hole |
| Package Height | 9.45(Max) mm |
| Package Width | 4.57(Max) mm |
| Package Length | 10.36(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
Looking for a component that can both amplify and switch between signals within your circuit? The IPP040N06N3GXKSA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 188000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes optimos 3 technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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