25-50% de réduction
Infineon Technologies AGIPP032N06N3GXKSA1MOSFET
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| OptiMOS | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 120 | |
| 3.2@10V | |
| 124@10V | |
| 124 | |
| 10000@30V | |
| 188000 | |
| 20 | |
| 120 | |
| 62 | |
| 35 | |
| -55 | |
| 175 | |
| Tube | |
| 2.3@10V|2.6@10V | |
| 480 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.45(Max) mm |
| Largeur du paquet | 4.57(Max) mm |
| Longueur du paquet | 10.36(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 | |
| Forme de sonde | Through Hole |
This IPP032N06N3GXKSA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 188000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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