Infineon Technologies AGIPD65R190C7ATMA1MOSFET
Trans MOSFET N-CH 650V 13A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 4 | |
| 13 | |
| 100 | |
| 1 | |
| 190@10V | |
| 23@10V | |
| 23 | |
| 1150@400V | |
| 72000 | |
| 9 | |
| 11 | |
| 54 | |
| 11 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 168@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 6.22 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPD65R190C7ATMA1 power MOSFET. Its maximum power dissipation is 72000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos c7 technology.
| EDA / CAD Models |
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