Infineon Technologies AGIPD30N08S2L21ATMA1MOSFET
Trans MOSFET N-CH 75V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 75 | |
| ±20 | |
| 2 | |
| 30 | |
| 20.5@10V | |
| 56@10V | |
| 56 | |
| 1650@25V | |
| 136000 | |
| 11 | |
| 30 | |
| 44 | |
| 9 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 15.9@10V|20.6@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 6.22 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' IPD30N08S2L21ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 136000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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