Infineon Technologies AGIPB65R115CFD7AMOSFET
650V CoolMOS™ N-channel automotive SJ power MOSFET CFD7A
The 115mOhm IPB65R115CFD7A in D²PAK 3-pin package is part of the automotive-qualified 650V CoolMOS™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS™ CFD7A offers higher reliability and power density while increasing design flexibility.
Summary of Features
• AEC-Q101 qualified
• Battery voltages up to 475V without compromising on reliability standards
• Efficiency improvements in hard- and soft-switching topologies up to 98.4%
• Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS™ CFDA
Benefits
• Highest reliability in the field meeting automotive lifetime requirements
• Enabling of higher power density designs
• Scalable as designed for use in PFC and DC-DC stage
• Granular portfolio available
Potential Applications
On-board chargers
• Hard-switching topologies (with SiC diode)
• PFC boost-stages
• DC-DC stage of on-board chargers
HV-LV DC-DC converters
• LLC or full-bridge phase shift (ZVS)
Auxiliary power supplies
650v Coolmos CFD7A High-voltage Superjunction MOSFETs
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 4.5 | |
| 21 | |
| 1000 | |
| 1 | |
| 115@10V | |
| 41@10V | |
| 41 | |
| 1950@400V | |
| 114000 | |
| 5 | |
| 9 | |
| 71 | |
| 17 | |
| -40 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.4 mm |
| Largeur du paquet | 9.25 mm |
| Longueur du paquet | 10 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 |
| EDA / CAD Models |
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