Infineon Technologies AGIPB60R099CPATMA1MOSFET
Trans MOSFET N-CH 650V 31A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.55 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| ±20 | |
| 3.5 | |
| 31 | |
| 99@10V | |
| 60@10V | |
| 60 | |
| 2800@100V | |
| 255000 | |
| 5 | |
| 5 | |
| 60 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.4 mm |
| Largeur du paquet | 9.25 mm |
| Longueur du paquet | 10 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB60R099CPATMA1 power MOSFET. Its maximum power dissipation is 255000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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