Infineon Technologies AGIPB200N15N3GATMA1MOSFET
Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 50 | |
| 100 | |
| 1 | |
| 20@10V | |
| 23@10V | |
| 23 | |
| 4 | |
| 10 | |
| 332 | |
| 9 | |
| 1820@75V | |
| 5@75V | |
| 2 | |
| 214 | |
| 150000 | |
| 6 | |
| 11 | |
| 23 | |
| 14 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 16@8V|16@10V | |
| 200 | |
| 50 | |
| 1 | |
| 5.7 | |
| 106 | |
| 1.2 | |
| 3 | |
| 20 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.4 mm |
| Largeur du paquet | 9.25 mm |
| Longueur du paquet | 10 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
This IPB200N15N3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 150000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes optimos 3 technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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