Infineon Technologies AGIPB200N15N3GATMA1MOSFETs
Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 50 | |
| 100 | |
| 1 | |
| 20@10V | |
| 23@10V | |
| 23 | |
| 4 | |
| 10 | |
| 332 | |
| 9 | |
| 1820@75V | |
| 5@75V | |
| 2 | |
| 214 | |
| 150000 | |
| 6 | |
| 11 | |
| 23 | |
| 14 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 16@8V|16@10V | |
| 200 | |
| 50 | |
| 1 | |
| 5.7 | |
| 106 | |
| 1.2 | |
| 3 | |
| 20 | |
| Mounting | Surface Mount |
| Package Height | 4.4 mm |
| Package Width | 9.25 mm |
| Package Length | 10 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
This IPB200N15N3GATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 150000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes optimos 3 technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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