Infineon Technologies AGIPB036N12N3GATMA1MOSFET
Trans MOSFET N-CH 120V 180A 7-Pin(6+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quint Source | |
| Enhancement | |
| N | |
| 1 | |
| 120 | |
| ±20 | |
| 4 | |
| 180 | |
| 3.6@10V | |
| 158@10V | |
| 158 | |
| 10400@60V | |
| 300000 | |
| 21 | |
| 52 | |
| 76 | |
| 35 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.9@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.57(Max) mm |
| Largeur du paquet | 9.45(Max) mm |
| Longueur du paquet | 10.31(Max) mm |
| Carte électronique changée | 6 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 7 | |
| Forme de sonde | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' IPB036N12N3GATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 300000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.
| EDA / CAD Models |
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