Infineon Technologies AGIPB035N08N3GATMA1MOSFET
Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.5 | |
| 100 | |
| 100 | |
| 1 | |
| 3.5@10V | |
| 88@10V | |
| 88 | |
| 6100@40V | |
| 214000 | |
| 14 | |
| 79 | |
| 45 | |
| 23 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.8@10V|3.6@6V|3.1@10V|3.9@6V | |
| 400 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.57(Max) mm |
| Largeur du paquet | 9.45(Max) mm |
| Longueur du paquet | 10.31(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB035N08N3GATMA1 power MOSFET. Its maximum power dissipation is 214000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology.
| EDA / CAD Models |
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