Infineon Technologies AGIPB035N08N3GATMA1MOSFETs
Trans MOSFET N-CH 80V 100A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.5 | |
| 100 | |
| 100 | |
| 1 | |
| 3.5@10V | |
| 88@10V | |
| 88 | |
| 6100@40V | |
| 214000 | |
| 14 | |
| 79 | |
| 45 | |
| 23 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.8@10V|3.6@6V|3.1@10V|3.9@6V | |
| 400 | |
| Mounting | Surface Mount |
| Package Height | 4.57(Max) mm |
| Package Width | 9.45(Max) mm |
| Package Length | 10.31(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB035N08N3GATMA1 power MOSFET. Its maximum power dissipation is 214000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology.
| EDA / CAD Models |
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