Infineon Technologies AGIPB025N10N3GATMA1MOSFET
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quint Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.5 | |
| 180 | |
| 2.5@10V | |
| 155@10V | |
| 155 | |
| 11100@50V | |
| 300000 | |
| 28 | |
| 58 | |
| 84 | |
| 34 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2@10V|2.5@6V | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.57(Max) mm |
| Largeur du paquet | 9.45(Max) mm |
| Longueur du paquet | 10.31(Max) mm |
| Carte électronique changée | 6 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 7 | |
| Forme de sonde | Gull-wing |
Increase the current or voltage in your circuit with this IPB025N10N3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology.
| EDA / CAD Models |
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