Infineon Technologies AGIPB025N10N3GATMA1MOSFETs
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quint Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.5 | |
| 180 | |
| 2.5@10V | |
| 155@10V | |
| 155 | |
| 11100@50V | |
| 300000 | |
| 28 | |
| 58 | |
| 84 | |
| 34 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2@10V|2.5@6V | |
| Mounting | Surface Mount |
| Package Height | 4.57(Max) mm |
| Package Width | 9.45(Max) mm |
| Package Length | 10.31(Max) mm |
| PCB changed | 6 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 7 | |
| Lead Shape | Gull-wing |
Increase the current or voltage in your circuit with this IPB025N10N3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology.
| EDA / CAD Models |
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