Infineon Technologies AGIPB014N06NATMA1MOSFET
Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quint Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3.3 | |
| 180 | |
| 1.4@10V | |
| 106@10V | |
| 106 | |
| 7800@30V | |
| 3000 | |
| 14 | |
| 18 | |
| 47 | |
| 22 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 1.2@10V|1.5@6V | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.57(Max) mm |
| Largeur du paquet | 9.45(Max) mm |
| Longueur du paquet | 10.31(Max) mm |
| Carte électronique changée | 6 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 7 | |
| Forme de sonde | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' IPB014N06NATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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