Infineon Technologies AGIPA075N15N3GXKSA1MOSFET
Trans MOSFET N-CH 150V 43A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541290095 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| OptiMOS | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 4 | |
| 43 | |
| 7.5@10V | |
| 70@10V | |
| 70 | |
| 5470@75V | |
| 39000 | |
| 15 | |
| 25 | |
| 50 | |
| 22 | |
| -55 | |
| 175 | |
| Tube | |
| 5.9@10V|6.2@8V | |
| Installation | Through Hole |
| Hauteur du paquet | 16 mm |
| Largeur du paquet | 4.7 mm |
| Longueur du paquet | 10.5 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IPA075N15N3GXKSA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 39000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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