10-25% de reduction
Diodes IncorporatedFMMT6520TAGP BJT
Trans GP BJT PNP 350V 0.5A 330mW 3-Pin SOT-23 T/R
Compliant | |
EAR99 | |
Active | |
COMPONENTS | |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Small Signal | |
Si | |
Single | |
1 | |
350 | |
350 | |
5 | |
0.75@1mA@10mA|0.85@2mA@20mA|0.9@3mA@30mA | |
0.3@1mA@10mA|0.35@2mA@20mA|0.5@3mA@30mA|1@5mA@50mA | |
0.5 | |
20@1mA@10V|30@10mA@10V|30@30mA@10V|20@50mA@10V|15@100mA@10V | |
330 | |
50(Min) | |
-55 | |
150 | |
Tape and Reel | |
Installation | Surface Mount |
Hauteur du paquet | 0.98 mm |
Largeur du paquet | 1.3 mm |
Longueur du paquet | 2.9 mm |
Carte électronique changée | 3 |
Nom de lemballage standard | SOT |
Conditionnement du fournisseur | SOT-23 |
3 | |
Forme de sonde | Gull-wing |
This PNP FMMT6520TA general purpose bipolar junction transistor from Diodes Zetex is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V.
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