onsemiDTA114YET1GBJT numérique
Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin SOT-416 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 10 | |
| 0.21 | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75 |
| Largeur du paquet | 0.8 |
| Longueur du paquet | 1.6 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-416 |
| 3 | |
| Forme de sonde | Gull-wing |
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT's within? Look no further than the PNP DTA114YET1G digital transistor from ON Semiconductor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |
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