Diodes IncorporatedDSS20200L-7GP BJT
Trans GP BJT PNP 20V 2A 1200mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.50 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 20 | |
| 20 | |
| 7 | |
| 0.9@10mA@1A | |
| 0.013@10mA@0.1A|0.09@100mA@1A|0.12@10mA@1A|0.18@200mA@2A | |
| 2 | |
| 100 | |
| 250@10mA@2V|250@500mA@2V|180@1A@2V|150@2A@2V | |
| 1200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.98 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Thanks to Diodes Zetex, your circuit can handle high levels of voltage using the PNP DSS20200L-7 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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