Diodes IncorporatedDMN2011UFDE-7MOSFET
Trans MOSFET N-CH 20V 11.7A 6-Pin UDFN EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±12 | |
| 1 | |
| 11.7 | |
| 10000 | |
| 1 | |
| 9.5@4.5V | |
| 24@4.5V|56@10V | |
| 56 | |
| 2248@10V | |
| 1970 | |
| 13.5 | |
| 2.6 | |
| 21.6 | |
| 3.6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.57 mm |
| Largeur du paquet | 2 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | UDFN EP |
| 6 | |
| Forme de sonde | No Lead |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the DMN2011UFDE-7 power MOSFET, developed by Diodes Zetex. Its maximum power dissipation is 1970 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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