Diodes IncorporatedDMMT5551-7-FGP BJT
Trans GP BJT NPN 160V 0.2A 300mW 6-Pin SOT-26 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 180 | |
| 160 | |
| 6 | |
| 1@1mA@10mA|1@5mA@50mA | |
| 0.15@1mA@10mA|0.2@5mA@50mA | |
| 0.2 | |
| 50 | |
| 80@1mA@5V|80@10mA@5V|30@50mA@5V | |
| 300 | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.1 mm |
| Largeur du paquet | 1.6 mm |
| Longueur du paquet | 3 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-26 |
| 6 | |
| Forme de sonde | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN DMMT5551-7-F GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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