| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Source Common Drain | |
| Enhancement | |
| N | |
| 2 | |
| 12 | |
| ±10 | |
| -55 to 150 | |
| 8 | |
| 5.9@4.5V | |
| 8.4@4.5V | |
| 902@6V | |
| 2300 | |
| 589 | |
| 353 | |
| 711 | |
| 205 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.2 |
| Largeur du paquet | 1.15(Max) |
| Longueur du paquet | 2.2(Max) |
| Carte électronique changée | 6 |
| Conditionnement du fournisseur | PicoStar |
| 6 | |
| Forme de sonde | No Lead |
Increase the current or voltage in your circuit with this CSD83325L power MOSFET from Texas Instruments. Its maximum power dissipation is 2300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology.
| EDA / CAD Models |
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