| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| P | |
| 2 | |
| -6 | |
| 1.1 | |
| 3.9 | |
| 100 | |
| 1 | |
| 54@4.5V | |
| 2.9@4.5V | |
| 0.4 | |
| 458 | |
| 700 | |
| 16 | |
| 8.6 | |
| 32.1 | |
| 12.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.28(Max) |
| Largeur du paquet | 1.5 |
| Longueur du paquet | 1.5 |
| Carte électronique changée | 9 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | DSBGA |
| 9 | |
| Forme de sonde | Ball |
Make an effective common gate amplifier using this CSD75207W15 power MOSFET from Texas Instruments. Its maximum power dissipation is 700 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes nexfet technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.