| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| P | |
| 2 | |
| -6 | |
| 1.1 | |
| 3.9 | |
| 100 | |
| 1 | |
| 54@4.5V | |
| 2.9@4.5V | |
| 0.4 | |
| 458 | |
| 700 | |
| 16 | |
| 8.6 | |
| 32.1 | |
| 12.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8 | |
| Mounting | Surface Mount |
| Package Height | 0.28(Max) |
| Package Width | 1.5 |
| Package Length | 1.5 |
| PCB changed | 9 |
| Standard Package Name | BGA |
| Supplier Package | DSBGA |
| 9 | |
| Lead Shape | Ball |
Make an effective common gate amplifier using this CSD75207W15 power MOSFET from Texas Instruments. Its maximum power dissipation is 700 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes nexfet technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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