| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.2 | |
| 150 | |
| 100 | |
| 1 | |
| 2.7@10V | |
| 118@10V | |
| 118 | |
| 17 | |
| 9250@50V | |
| 1820 | |
| 375000 | |
| 5 | |
| 8 | |
| 38 | |
| 14 | |
| -55 | |
| 175 | |
| Tube | |
| 2.5 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.25(Max) |
| Largeur du paquet | 4.7(Max) |
| Longueur du paquet | 10.36(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
As an alternative to traditional transistors, the CSD19536KCS power MOSFET from Texas Instruments can be used to both amplify and switch electronic signals. Its maximum power dissipation is 375000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.