| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.2 | |
| 150 | |
| 100 | |
| 1 | |
| 2.7@10V | |
| 118@10V | |
| 118 | |
| 17 | |
| 9250@50V | |
| 1820 | |
| 375000 | |
| 5 | |
| 8 | |
| 38 | |
| 14 | |
| -55 | |
| 175 | |
| Tube | |
| 2.5 | |
| Mounting | Through Hole |
| Package Height | 9.25(Max) mm |
| Package Width | 4.7(Max) mm |
| Package Length | 10.36(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
As an alternative to traditional transistors, the CSD19536KCS power MOSFET from Texas Instruments can be used to both amplify and switch electronic signals. Its maximum power dissipation is 375000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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